View VN10LF_454706.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
w
VN10LF
S
w
ISSUE 2 - JANUARY 1996 FEATURES * 60 Volt VDS * RDS(on)=5
w .D at aS
D G
w
PARTMARKING DETAIL -
MY
he
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Gate Body Leakage Zero Gate Voltage Drain Current (1) SYMBOL BV DSS MIN. 60 TYP. MAX. UNIT V 2.5 V nA CONDITIONS. I D=100A, V GS=0V I D =1mA, V DS= V GS V GS= 20V, V DS=0V V DS=60 V, V GS=0V
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device For typical characteristics graphs see ZVN3306F datasheet.
w
w
et 4U
Continuous Drain Current at T amb = 25C Pulsed Drain Current Gate Source Voltage
Power Dissipation at T amb = 25C
Operating and Storage Temperature Range
w
.D
SYMBOL V DS ID I DM V GS P tot T j :T stg
VALUE 60 150 3 20 330
UNIT V
.c
.D
g fs
om
mA A V mW C
at
V GS(th) I GSS I DSS I D(on) R DS(on) 0.8 C iss C oss C rss
-55 to +150
aS
750 100
he
100 10
et
A
4U
w
On State Drain Current(1) Static Drain Source On State Resistance (1)
mA
V DS=15 V, V GS=10V V GS=10V, I D=500mA V GS=5V, I D=200mA
5.0 7.5
Forward Transconductance (1)(2)
Input Capacitance (2)
Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Time (2)(3) Turn-Off Time (2)(3)
w
mS
V DS=15V, I D=500mA
.c
at aS
60 25 5 3 4 10 10 pF pF pF ns ns
V DS=25 V, V GS=0V f=1MHz
om
he
t (on) t (off)
et 4U .c om
3 - 308
V DD 15V, I D=600mA

▲Up To Search▲

Price & Availability of VN10LF

	To Download VN10LF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .